| PART |
Description |
Maker |
| KBU1001 KBU1002 KBU1006 KBU10005 KBU1004 KBU1010 K |
Tantalum Molded Capacitor; Capacitance: 47uF; Voltage: 6.3V; Case Size: 1.1x3.4 mm; Packaging: Tape & Ammo 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
10 AMP SILICON BRIDGE RECTIFIER
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| CBR1-D100S CBR1-D060S CBR1-D040S CBR1-D020S |
1.0 AMP Dual in Line Bridge Rectifier(重复峰值反向电00V,1.0 A双列直插桥式整流
1.0 AMP Dual in Line Bridge Rectifier(重复峰值反向电60V,1.0 A双列直插桥式整流
1.0 AMP Dual in Line Bridge Rectifier(重复峰值反向电100V,1.0 A双列直插桥式整流
1.0 AMP Dual in Line Bridge Rectifier(重复峰值反向电0V,1.0 A双列直插桥式整流
1.0 AMP Dual in Line Bridge Rectifier(???宄板?????靛?0V,1.0 A????存?妗ュ??存???
|
Central Semiconductor Corp.
|
| CBR1F-D100S CBR1F-D020S CBR1F-D040S CBR1F-D060S CB |
SMD Bridge Rectifier Fast Recovery
1.0 AMP DUAL IN LINE FAST RECOVERY SILICON BRIDGE RECTIFIER 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
1.0 AMP DUAL IN LINE FAST RECOVERY SILICON BRIDGE RECTIFIER 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| NTE5318 NTE5320 NTE5319 |
4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Single Phase Bridge Rectifier 4 Amp
|
NTE[NTE Electronics]
|
| DB107-BP DB105-BP DB101-BP DB104-BP |
RECTIFIER BRIDGE 1A 1000V DB-1 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 1A 600V DB-1 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 1A 50V DB-1 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 1A 400V DB-1
|
Micro Commercial Components, Corp.
|
| 1KAB20E 1KAB100E 1KAB80E 1KAB-E 1KAB10E 1KAB40E 1K |
200V Bridge in a D-38 package
50V Bridge in a D-38 package
1000V Bridge in a D-38 package
100V Bridge in a D-38 package
400V Bridge in a D-38 package
600V Bridge in a D-38 package
800V Bridge in a D-38 package
1.2 amp rectifier bridge
|
http://
IRF[International Rectifier]
|
| MZ20007 MZ800 |
Three Phase 12 Amp bridge Rectifier
3 Phase Bridge; IO/ Leg (A): 12; VR / Leg (V): 800; IFSM / Leg (A): 100; IR/Leg (µA): 5; VF/leg (V): 1.2; 3 PHASE, 12 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi Corporation
Microsemi, Corp.
|
| GBJ1010 GBJ10005 GBJ1001 GBJ1002 GBJ1004 GBJ1006 G |
Aluminum Polymer SMT Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 10x10 mm; Packaging: Tape & Reel 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Aluminum Polymer SMT Capacitor; Capacitance: 68uF; Voltage: 20V; Case Size: 10x8 mm; Packaging: Tape & Reel 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Aluminum Polymer SMT Capacitor; Capacitance: 22uF; Voltage: 20V; Case Size: 6.3x6 mm; Packaging: Tape & Reel 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
10A GLASS PASSIVATED BRIDGE RECTIFIER
|
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| CBR50-020P CBR50-060P |
50 AMP SILICON BRIDGE RECTIFIER 200 thru 1000 VOLTS 50 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
50 AMP SILICON BRIDGE RECTIFIER 200 thru 1000 VOLTS 50 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
|
Bourns, Inc.
Central Semiconductor, Corp.
|
| 469-01 469-03 JANTX469-01 JANTX469-02 |
SINGLE PHASE 10 AMP RECTIFIER BRIDGES
10 A, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi Corporation
MICROSEMI CORP-SCOTTSDALE
|
